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2SD2131 |
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| Part Number | 2SD2131 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2131 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE... |
| Features |
ture, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 5 kΩ
≈ 150 Ω
Emitter
1 2006-11-21
Electrical Characteristics (Tc = 25°C)
2SD2131
Characteristic... |
| Document |
 2SD2131 Data Sheet
PDF 266.61KB |
| Distributor | Stock | Price | Buy |
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