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Toshiba |
2SC3420 pplication of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) ar |
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Toshiba |
2SC3474 ansition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob VCB = 80 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 400 mA IC = 300 mA, IB = 1 mA IC = 300 mA, IB = 1 mA |
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Toshiba Semiconductor |
Silicon NPN Transistor n the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test rep |
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Toshiba Semiconductor |
Silicon NPN Transistor .5 ¾ dB ¾ 1.5 ¾ dB ¾ 1.7 ¾ Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Reverse transfer capacita |
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Toshiba |
2SC3405 significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Ha |
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Toshiba Semiconductor |
2SC3419 |
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Toshiba |
2SC3422 |
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Toshiba |
2SC3423 |
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Toshiba |
2SC3437 ng temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and indi |
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Toshiba Semiconductor |
Silicon NPN Triple Diffused Type TRANSISTOR significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Ha |
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Toshiba Semiconductor |
Silicon NPN Transistor ng temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and indi |
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Toshiba Semiconductor |
2SC3421 maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated |
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Toshiba |
2SC3429 .5 ¾ dB ¾ 1.5 ¾ dB ¾ 1.7 ¾ Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Reverse transfer capacita |
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Toshiba Semiconductor |
Silicon NPN Transistor e/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliabili |
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Toshiba Semiconductor |
Silicon NPN Transistor pplication of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) ar |
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Toshiba Semiconductor |
Silicon NPN Transistor e maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and esti |
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Toshiba Semiconductor |
Silicon NPN Transistor within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability te |
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Toshiba |
TFT LCD Module (1) 12.1 SVGA color display with High Luminance TENTATIVE (2) Built in Long Life Lamps(MTTF:50,000 h) ( Condition/ Ta:25 C, IFL:6mA(rms)(continuing lighting), fFL:50kHz ) RoHS compatible (3) Replaceable structure of lamp units and Mounting compat |
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Toshiba Semiconductor |
Silicon NPN Transistor |
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Toshiba Semiconductor |
Silicon NPN Epitaxial Type TRANSISTOR ansition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob VCB = 80 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 400 mA IC = 300 mA, IB = 1 mA IC = 300 mA, IB = 1 mA |
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