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2SC3419 |
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| Part Number | 2SC3419 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. 2SC3419 Unit: mm • Low saturation voltage: VCE (sat) = 0.25 V (typ.) (IC = 500 mA, IB = 50 mA... |
| Features |
e/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-09
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency ... |
| Document |
 2SC3419 Data Sheet
PDF 132.51KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3412 |
Inchange Semiconductor |
Power Transistor |
|
| 2 | 2SC3413 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Transistor |
|
| 3 | 2SC3415 |
SeCoS |
NPN Plastic-Encapsulated Transistor |
|
| 4 | 2SC3415 |
Rohm |
Triple Diffused Planar NPN Silicon Transistor |
|
| 5 | 2SC3415S |
Rohm |
Chroma Amplifier Transistor |
|