2SC3429 Toshiba Semiconductor Silicon NPN Transistor Datasheet, en stock, prix

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2SC3429

Toshiba Semiconductor
2SC3429
2SC3429 2SC3429
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Part Number 2SC3429
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3429 2SC3429 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure · NF = 1.5dB, |S21e|2 = 16dB (f = 500 MHz) · NF = 1.7...
Features .5 ¾ dB ¾ 1.5 ¾ dB ¾ 1.7 ¾ Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz (Note) ¾ ¾ 25 ¾ ¾ ¾ ¾ ¾ 0.85 0.57 1 1 ¾ ¾ ¾ mA mA pF pF Note: Cre is measured by 3 terminal method with capacitance bridge. 1 2003-03-19 Marking 2SC3429 2 2003-03-19 2SC3429 3 2003-03-19 2SC3429 4 2003-03-19 2SC3429 RES...

Document Datasheet 2SC3429 Data Sheet
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