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South Sea Semiconductor SSD DataSheet

No. Partie # Fabricant Description Fiche Technique
1
SSD3055LA

South Sea Semiconductor
N-Channel MOSFET
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o
Datasheet
2
SSD2030N

South Sea Semiconductor
N-Channel MOSFET
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o
Datasheet
3
SSD5030N

South Sea Semiconductor
N-Channel MOSFET
Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pu
Datasheet
4
SSD1030P

South Sea Semiconductor
P-Channel Enhancement Mode MOSFET
Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -P
Datasheet
5
SSD3030N

South Sea Semiconductor
N-Channel MOSFET
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb Free. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Puls
Datasheet
6
SSD2030P

South Sea Semiconductor
P-Channel Enhancement Mode MOSFET
Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -P
Datasheet
7
SSD3030P

South Sea Semiconductor
P-Channel Enhancement Mode MOSFET
Super high density cell design for low RDS(ON) . Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -
Datasheet



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