No. | Partie # | Fabricant | Description | Fiche Technique |
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South Sea Semiconductor |
N-Channel MOSFET Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o |
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South Sea Semiconductor |
N-Channel MOSFET Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o |
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South Sea Semiconductor |
N-Channel MOSFET Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pu |
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South Sea Semiconductor |
P-Channel Enhancement Mode MOSFET Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -P |
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South Sea Semiconductor |
N-Channel MOSFET Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb Free. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Puls |
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South Sea Semiconductor |
P-Channel Enhancement Mode MOSFET Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -P |
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South Sea Semiconductor |
P-Channel Enhancement Mode MOSFET Super high density cell design for low RDS(ON) . Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C - |
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