logo

Sony Corporation SGM DataSheet

No. Partie # Fabricant Description Fiche Technique
1
SGM2016M

Sony Corporation
GaAs N-channel Dual-Gate MES FET
Datasheet
2
SGM2016AP

Sony Corporation
GaAs N-channel Dual-Gate MES FET

• Low voltage operation
• Low noise NF = 1.2dB (typ.) at 900MHz
• High gain Ga = 21dB (typ.) at 900MHz
• High stability
• Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Structure GaAs, N-channel, d
Datasheet
3
SGM2013N

Sony Corporation
GaAs N-channel Dual-Gate MES FET

• Ultra-small package
• Low voltage operation
• Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz
• High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz
• High stability
• Built-in gate protection diode Application UHF-band h
Datasheet
4
SGM2014AM

Sony Corporation
GaAs N-channel Dual-Gate MES FET

• Low voltage operation
• Low noise: NF = 1.5dB (typ.) at 900MHz
• High gain: Ga = 18dB (typ.) at 900MHz
• Low cross-modulation
• High stability
• Built-in gate-protection diode Application UHF band amplifier, mixer and oscillator Structure GaAs N-ch
Datasheet
5
SGM2014AN

Sony Corporation
GaAs N-channel Dual-Gate MES FET

• Ultra small package
• Low voltage operation
• Low noise: NF = 1.5dB (typ.) at 900MHz
• High gain: Ga = 18dB (typ.) at 900MHz
• Low cross-modulation
• High stability
• Built-in gate-protection diode Application UHF band amplifier, mixer and oscillat
Datasheet
6
SGM2014M

Sony Corporation
GaAs N-channel Dual Gate MES FET
Datasheet
7
SGM2016AM

Sony Corporation
GaAs N-channel Dual-Gate MES FET

• Low voltage operation
• Low noise NF = 1.2dB (typ.) at 900MHz
• High gain Ga = 21dB (typ.) at 900MHz
• High stability
• Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Structure GaAs, N-channel, d
Datasheet
8
SGM2016AN

Sony Corporation
GaAs N-channel Dual-Gate MES FET

• Ultra-small package
• Low voltage operation
• Low noise NF = 1.2dB (typ.) at 900MHz
• High gain Ga = 21dB (typ.) at 900MHz
• High stability
• Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Struct
Datasheet
9
SGM2016P

Sony Corporation
GaAs N-channel Dual-Gate MES FET
Datasheet



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact