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SGM2016AN |
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| Part Number | SGM2016AN |
| Manufacturer | Sony Corporation |
| Description | The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and D... |
| Features |
• Ultra-small package • Low voltage operation • Low noise NF = 1.2dB (typ.) at 900MHz • High gain Ga = 21dB (typ.) at 900MHz • High stability • Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Structure GaAs, N-channel, dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) • Drain to source voltage VDSX 12 • Gate 1 to source voltage VG1S –5 • Gate 2 to source voltage VG2S –5 • Drain current ID 55 • Allowable power dissipation PD 100 • Channel temperature Tch 125 • Storage temperature Tstg –55 to +150 M-281 ... |
| Document |
 SGM2016AN Data Sheet
PDF 56.22KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SGM2016AM |
Sony Corporation |
GaAs N-channel Dual-Gate MES FET |
|
| 2 | SGM2016AP |
Sony Corporation |
GaAs N-channel Dual-Gate MES FET |
|
| 3 | SGM2016M |
Sony Corporation |
GaAs N-channel Dual-Gate MES FET |
|
| 4 | SGM2016P |
Sony Corporation |
GaAs N-channel Dual-Gate MES FET |
|
| 5 | SGM2013 |
SG Micro |
Linear Regulators |
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