| No. | Partie # | Fabricant | Description | Fiche Technique |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) b 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection. Semiconductor Group 1 09.96 BSP 129 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown v |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor aracteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 240 1.5 0.1 10 10 4.5 5.3 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold v |
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Siemens Semiconductor Group |
Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection) • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • Overload protection • Short circuit protection • Overvoltage protection • Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping |
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Siemens Semiconductor Group |
IGBT plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 57 03.96 BSM 181 BSM 181 R Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteris |
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Siemens Semiconductor Group |
Smart Lowside Power Switch • Logic Level Input • Input protection (ESD) • Thermal shutdown (with restart) • Overload protection • Short circuit protection • Overvoltage protection • Current limitation Product Summary Continuous drain source voltage On-state resistance Current |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor g RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown vo |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 100 1.5 0.1 2 1 1 3.5 5 2 1 60 10 10 V VGS = 0 V, ID = 0.25 mA, Tj = |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor JA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 65 2 0. |
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Siemens Semiconductor Group |
PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER • High Current Transfer Ratio, IF=10 mA, VCE=5 V IL205A, 40 –80% IL206A, 63 –125% IL207A, 100 –200% IL208A, 160 –320% • High BVCEO, 70 V • Isolation Test Voltage, 2500 VACRMS • Industry Standard SOIC-8 Surface Mountable Package • Standard Lead Spacing, . |
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Siemens Semiconductor Group |
PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER • High Current Transfer Ratio, IF=10mA, VCE=5 V IL205AT, 40 – 80% IL206AT, 63 –125% IL207AT, 100 – 200% IL208AT, 160 – 320% High BVCEO, 70 V Isolation Voltage, 2500 VACRMS Industry Standard SOIC-8 Surface Mountable Package Standard Lead Spacing, .05 |
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Siemens Semiconductor Group |
PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER • High Current Transfer Ratio, IF=10mA, VCE=5 V IL205AT, 40 – 80% IL206AT, 63 –125% IL207AT, 100 – 200% IL208AT, 160 – 320% High BVCEO, 70 V Isolation Voltage, 2500 VACRMS Industry Standard SOIC-8 Surface Mountable Package Standard Lead Spacing, .05 |
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Siemens Semiconductor Group |
PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER N EW • High Current Transfer Ratio IL211AT—20% Minimum IL212AT—50% Minimum IL213AT—100% Minimum Isolation Voltage, 2500 VACRMS Electrical Specifications Similar to Standard 6 Pin Coupler Industry Standard SOIC-8 Surface Mountable Package Standard Le |
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Siemens Semiconductor Group |
PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER Package Dimensions in Inches (mm) • High Current Transfer Ratio, IF=1 mA IL215AT, 20% Minimum IL216AT, 50% Minimum IL217AT, 100% Minimum Isolation Voltage, 2500 VACRMS Electrical Specifications Similar to Standard 6 Pin Coupler Industry Standard SOI |
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Siemens Semiconductor Group |
Smart Highside Power Switch • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open dra |
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Siemens Semiconductor Group |
integrated modulator-mixer for transmit path |
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Siemens Semiconductor Group |
PLASTIC FIBER OPTIC TRANSMITTER DIODE |
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Siemens Semiconductor Group |
IGBT Vis - Semiconductor Group 1 Mar-29-1996 BSM 100 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 3.1 2.5 |
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Siemens Semiconductor Group |
IGBT plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 31 03.96 BSM 121 AR Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Dr |
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Siemens Semiconductor Group |
IGBT 150 GT 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 2 8 6.5 3 3.7 V VGE = VCE, IC = 6 mA Collector- |
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Siemens Semiconductor Group |
IGBT eristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 0.3 1.2 6.5 3 3.7 V VGE = VCE, IC = 0.6 mA Collector-emitter saturation voltage |
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