| No. | Partie # | Fabricant | Description | Fiche Technique |
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Siemens Semiconductor Group |
NPN SILICON RF TRANSISTORS |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: BC337 |
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Siemens Semiconductor Group |
NPN Silicon Switching Transistors nless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 PZT 2222 PZT 2222 A Collector-base breakdown voltage IC = 10 µA, IB = 0 PZT 2222 PZT 2222 A Emitter-base breakdown voltage IE = |
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Siemens Semiconductor Group |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS |
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Siemens Semiconductor Group |
800 V TRIAC DRIVER OPTOCOUPLER • High Input Sensitivity, IFT=2 mA • Blocking Voltage, 800 V • Isolation Test Voltage 5300 VACRMS • 300 mA On-state Current • High Static dv/dt 10,000 V/Ms • Inverse Parallel SCRs Provide • Commutating dv/dt >2K V/µ s • Very Low Leakage <10 µ A • Sma |
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Siemens Semiconductor Group |
Silicon Switching Diodes (High-speed/ high-voltage switch) IR – – – – 100 100 nA µA – – 1 1.25 120 200 250 – – – – – – V Values typ. max. Unit Forward voltage IF = 100 mA IF = 200 mA Reverse current VR = VR max VR = VR max; Tj = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recove |
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Siemens Semiconductor Group |
Signal Processing Subscriber Line Interface Codec Filter SLICOF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Pin Definition and Functions . . . . . . |
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Siemens Semiconductor Group |
NPN Silicon AF Transistors 50 W ˚C mA A BC 639 80 100 V Total power dissipation, TC = 90 ˚C1) Ptot 156 75 K/W 1) 2) If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for the collector terminal, Rth JA = 125 K/W an |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units q High capacitance ratio q Type BB 833 Ordering Code (tape and reel) Q62702-B628 Pin Configuration 1 2 C A Marking white X Package SOD-323 Maximum Ratings Par |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B B |
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Siemens Semiconductor Group |
NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 164 70 V 0.3 1.5 3 62 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = |
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Siemens Semiconductor Group |
Silicon Schottky Diode 10 S BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S FSSB – – – – rf BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S – – – – 3.5 4.0 7.0 10.0 – – – – 6.0 6.5 6.5 7.0 – – – – Ω – – – – – – – – 0.26 0.28 0.30 0.31 0.35 0.39 0.44 0.45 – – – – – |
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Siemens Semiconductor Group |
NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS |
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Siemens Semiconductor Group |
NPN SILICON PLANAR TRANSISTORS |
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Siemens Semiconductor Group |
SILICON MINIATURE THYRISTOR |
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Siemens Semiconductor Group |
NPN Silicon RF Transistors , IB = 0 Emitter-base breakdown voltage IE = 10 µA, IB = 0 Collector-base cutoff current VCB = 20 V, IE = 0 DC current gain, IC = 1 mA, VCE = 10 V BF 840 BF 841 Base-emitter voltage IC = 1 mA, VCE = 10 V AC Characteristics Transition frequency IC = 1 |
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Siemens Semiconductor Group |
Silicon PIN Diode IF = 10 mA τL Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Package Outline SOT-23 Semiconductor Group 2 BA 887 Diode capacitance CT = f (VR) f = 1 MHz, 100 MHz Forward resistance rt = (IF), f = 100 MHz 3rd Harmonic intercept point |
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Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) . Parameter Symbol Values min. DC characteristics Breakdown voltage typ. 0.95 max. 50 1.2 Unit V(BR) IR VF 50 - V µA mV I (BR) = 5 µA Reverse current VR = 20 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.3 0.21 1.2 |
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Siemens Semiconductor Group |
Silicon Schottky Diode rd current IF = f (VF) |
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