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Q62702-C2291 |
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| Part Number | Q62702-C2291 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BCR 148W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2=47kΩ) Type BCR 148W Marking Ordering Code WEs Q62702-C2... |
| Features |
breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA µA 164 70 V 0.3 1.5 3 62 1.1 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.8
VEB = 10 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
Vi(on)
1
IC = 2 mA, VCE = 0.3 V
Input resistor Resistor ratio
R1 R1/R2
32 0.9
AC Characteristics Transition frequency
fT
100 3 -
MHz pF -
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
Ccb
VCB = 10... |
| Document |
 Q62702-C2291 Data Sheet
PDF 34.78KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-C2292 |
Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
|
| 2 | Q62702-C2293 |
Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
|
| 3 | Q62702-C2294 |
Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
|
| 4 | Q62702-C2295 |
Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
|
| 5 | Q62702-C2296 |
Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
|