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BC639 |
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| Part Number | BC639 |
| Manufacturer | Siemens Semiconductor Group |
| Description | NPN Silicon AF Transistors High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 636, BC 638, BC 640 (PNP) q BC 635 … BC 639 2 3 1 Type BC ... |
| Features |
50 W ˚C mA A BC 639 80 100 V
Total power dissipation, TC = 90 ˚C1) Ptot
156 75
K/W
1)
2)
If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
2
BC 635 … BC 639
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 635 BC 637 BC 639 Collector-base breakdown voltage IC = 100 µA... |
| Document |
 BC639 Data Sheet
PDF 126.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BC635 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor |
|
| 2 | BC635 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 3 | BC635 |
Motorola Inc |
High Current Transistors |
|
| 4 | BC635 |
NXP |
NPN medium power transistors |
|
| 5 | BC635 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors |
|