No. | Partie # | Fabricant | Description | Fiche Technique |
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P-Channel Enhancement Mode Power MOSFET Advanced high cell density Trench technology Lower Gate Charge Green Device Available MARKING 13P06 = Date code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD13P06-C Lead (Pb)-free |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available MARKING 10N10J Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 20N06 = Date Code PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13 inch 2 ORDER INFORMATION Drain Part Number Type |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 25N10 = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch 2 ORDER INFORMATION Drain Part Number SSD25N |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 25N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K 1 Gate Leader Size 13 inch 2 Drain 3 Source TO-252(D-Pack) A B C D GE K HF |
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SeCoS |
P-Channel MOSFET Low RDS(on) provides higher efficiency and extends battery life. Miniature TO-252 surface mount package saves board space. High power and current handling capability. Extended VGS range (±25) for battery pack applications. PRODUCT SUMMARY V |
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SeCoS |
P-Ch Enhancement Mode Power MOSFET Simple Drive Requirement Lower On-Resistance Fast Switching Characteristic MARKING 12P10 = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD12P10-C Lead (Pb)-free |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Robust high voltage termination Avalanche energy specified Source-to-drain diode recovery time comparable to a discrete fast recovery diode Diode is characterized for the use in bridge circuits IDSS and VDS are specified at the elevated tem |
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SeCoS |
P-Channel Enhancement Mode Power MosFET Simple Drive Requirement Lower On-resistance Fast Switching Characteristic RoHS Compliant MARKING 12P10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch 1 Gate 2 Drain 3 Source A B C D GE K HF N O P M |
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SeCoS |
N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 95N03 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch A BC D GE |
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SeCoS |
P-Channel MOSFET Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology. A B C D PRODUCT SUMMARY VDS(V) -30 PRODUCT SUMMARY R |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. TO-252(D-Pack) APPLICATION PoE Power Sourcing Equipment. PoE Powered Devices. Telecom DC/DC converters. White LED boost converters. A B C D GE PACKAGE INFORMATION Package |
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SeCoS |
P-Channel MOSFET Low RDS(on) provides higher efficiency and extends battery life. Miniature TO-252 surface mount package saves board space. High power and current handling capability. Extended VGS range (±25) for battery pack applications. PACKAGE INFORMATIO |
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SeCoS |
N-Channel MOSFET Lower Gate Charge Advanced high cell density Trench technology Green Device Available MARKING 75N06 = Date code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD75N06-C Lead (Pb)-free |
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Secos |
N-Ch Enhancement Mode Power MOSFET Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 15N10 = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD15N10- |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 29N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD29N10J-C Lead (Pb)-fr |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 23N04 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD23N04-C Lead (Pb)-fre |
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SeCoS |
N-Channel MOSFET Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframce DPAK saves board space Fast switching speed High performance trench technology A B C D GE PRODUCT SUMMARY VDS(V) 60 PRODUCT SUMMARY |
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SeCoS |
P-Channel MOSFET Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology.. A B C D PRODUCT SUMMARY VDS(V) -40 PRODUCT SUMMARY |
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SeCoS |
P-Channel MOSFET Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology.. A B C D PRODUCT SUMMARY VDS(V) -60 PRODUCT SUMMARY |
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