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SSD02N60J-C |
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| Part Number | SSD02N60J-C |
| Manufacturer | SeCoS |
| Description | The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to wi... |
| Features |
Robust high voltage termination Avalanche energy specified Source-to-drain diode recovery time comparable to a discrete fast recovery diode Diode is characterized for the use in bridge circuits IDSS and VDS are specified at the elevated temperature PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13 inch Drain ORDER INFORMATION Part Number Type Gate SSD02N60J-C Lead (Pb)-free and Halogen-free Source TO-252 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.50 6.70 J 2.186 2.386 B 5.10 5.46 K 0.67 1.00 C 2.20 2.40 M 0.6 0.77 D 0.46 0.58 N 1.... |
| Document |
 SSD02N60J-C Data Sheet
PDF 547.65KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSD02N60SL |
SeCoS |
N-Channel MOSFET |
|
| 2 | SSD01L60 |
SeCoS |
N-Channel Enhancement Mode Power MosFET |
|
| 3 | SSD04N60J |
SeCoS |
N-Channel MOSFET |
|
| 4 | SSD06N70SL |
SeCoS |
N-Channel MOSFET |
|
| 5 | SSD0817 |
ETC |
LCD Segment / Common Driver |
|