| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
2SK3699 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications www.DataSheet4U.com Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute max |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain |
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Sanyo |
2SK3615 • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel T |
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Sanyo |
2SK3618 • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel T |
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Sanyo Semicon Device |
N-Channel Junction Silicon FET • • Small IGSS. Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS I |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • Package Dimensions unit : mm 2062A [2SK3614] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 1 1.0 0.4 2.5 4.25max 0.4 (Bottom view) 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specification |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain |
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