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2SK3617 |
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| Part Number | 2SK3617 |
| Manufacturer | Sanyo Semicon Device |
| Description | www.DataSheet4U.com Ordering number : ENN8112 2SK3617 2SK3617 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4... |
| Features |
• • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 100 ±20 6 24 1 15 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage D... |
| Document |
 2SK3617 Data Sheet
PDF 75.08KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK3610-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK3610-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 3 | 2SK3611-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 4 | 2SK3611-01MR |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2SK3612-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|