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2SK3666 |
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| Part Number | 2SK3666 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number : EN8158A 2SK3666 2SK3666 Applicatins www.DataSheet4U.com • N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Low-frequency ... |
| Features |
• • Small IGSS. Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 --30 10 10 200 150 --55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Static Drain-to-Source On-State Resistan... |
| Document |
 2SK3666 Data Sheet
PDF 64.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK366 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | 2SK3662 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | 2SK3663 |
NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR |
|
| 4 | 2SK3664 |
NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR |
|
| 5 | 2SK3665 |
Panasonic |
N-Channel Enhancement Mode MOSFET |
|