| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo |
2SK1065 · Ultrasmall package facilitates miniaturization in end products. · Small Crss (Crss=0.04pF typ). 0.425 Package Dimensions unit:mm 2057A [2SK1065] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 Specifications Absolute Maximum Ratings at Ta = 25˚C Paramet |
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Sanyo Semicon Device |
Thick Film Hybrid Integrated Circuit 50W min AF Power Amp Output Stage With Built-in Emitter Resistance |
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Sanyo |
2SK1052 · Low ON-state resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1052 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1052] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specificati |
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Sanyo |
2SK1066 · Large yfs. · Small Crss. · Ultralow noise figure. · Ultrasmall-sized package permitting 2SK1066- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1066] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2. |
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Sanyo |
2SK1067 · Low noise NF=1.8dB typ (f=100MHz). · High power gain PG=27dB typ (f=100MHz). · Small reverse transfer capacitance Crss=0.035pF (VDS=10V, f=1MHz). · Ultrasmall-sized package (MCP) permitting 2SK1067-applied sets to be made smaller and slimmer. Pack |
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Sanyo Semicon Device |
INTEGRATED EMITTER RESISTOR THICK FILM FILM HYBRID INTEGRATED CIRCUIT |
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Sanyo Semicon Device |
THICK FILM HYBRID INTEGRATED CIRCUIT |
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Sanyo |
2SK1069 · Adoption of FBET process. · Ultrasmall-sized package permitting 2SK1069- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1069] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0.425 Spe |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low noise NF=1.8dB typ (f=100MHz). · High power gain PG=27dB typ (f=100MHz). · Small reverse transfer capacitance Crss=0.035pF (VDS=10V, f=1MHz). · Ultrasmall-sized package (MCP) permitting 2SK1067-applied sets to be made smaller and slimmer. Pack |
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Sanyo Semicon Device |
N-Channel Junction Silicon FET · Small IGSS. · Small Crss. · Ultrasmall-sized package permitting 2SK1068- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1068] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0.425 Spe |
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Sanyo |
2SK1053 · Low ON-state resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1053 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1053] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specificati |
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Sanyo |
2SK1068 · Small IGSS. · Small Crss. · Ultrasmall-sized package permitting 2SK1068- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1068] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0.425 Spe |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON-state resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1052 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1052] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specificati |
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Sanyo Semicon Device |
N-Channel Junction Silicon FET · Large yfs. · Small Crss. · Ultralow noise figure. · Ultrasmall-sized package permitting 2SK1066- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1066] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2. |
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Sanyo Semicon Device |
N-Channel Junction Silicon FET · Adoption of FBET process. · Ultrasmall-sized package permitting 2SK1069- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1069] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0.425 Spe |
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Sanyo Semicon Device |
1.0A Power Rectifier |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON-state resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1053 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1053] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specificati |
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Sanyo Semicon Device |
N-Channel Junction Silicon FET · Ultrasmall package facilitates miniaturization in end products. · Small Crss (Crss=0.04pF typ). 0.425 Package Dimensions unit:mm 2057A [2SK1065] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 Specifications Absolute Maximum Ratings at Ta = 25˚C Paramet |
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Sanyo Semicon Device |
1.0A Power Rectifier • Designed for 5mm-pitch automatic insertion. • Small plastic molded structure(3mm body). • Peak reverse voltage : 100 to 1000V. • Average rectified current : 1.0A. Package Dimensions unit : mm 1168 [DSK10] 20.0 3.0 20.0 2.5 1 Specifications Abso |
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Sanyo Semicon Device |
1.0A Power Rectifier |
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