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2SK1069 |
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| Part Number | 2SK1069 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Applications · Low-frequency general-purpose amplifiers. · Ideal for use in variabl... |
| Features |
· Adoption of FBET process. · Ultrasmall-sized package permitting 2SK1069- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1069] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0.425 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Gate-to-Drain Breakdown Vo... |
| Document |
 2SK1069 Data Sheet
PDF 96.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK1060 |
NEC |
N-Channel MOS Field Effect Power Transistor |
|
| 2 | 2SK1060-Z |
NEC |
N-Channel MOS Field Effect Power Transistor |
|
| 3 | 2SK1061 |
Toshiba Semiconductor |
N-CHANNEL MOS TRANSISTOR |
|
| 4 | 2SK1062 |
Toshiba Semiconductor |
N-CHANNEL MOS TRANSISTOR |
|
| 5 | 2SK1063 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|