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2SK1065 |
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| Part Number | 2SK1065 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:ENN2746A N-Channel Junction Silicon FET 2SK1065 High-Frequency General-Purpose Amplifier Applications Features · Ultrasmall package facilitates miniaturization in end products. · Sma... |
| Features |
· Ultrasmall package facilitates miniaturization in end products. · Small Crss (Crss=0.04pF typ). 0.425 Package Dimensions unit:mm 2057A [2SK1065] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 1 : Gate 2 : Drain 3 : Source SANYO : MCP Conditions Ratings –20 10 20 150 150 –55 to +150 Unit V mA mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Par... |
| Document |
 2SK1065 Data Sheet
PDF 41.14KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK1060 |
NEC |
N-Channel MOS Field Effect Power Transistor |
|
| 2 | 2SK1060-Z |
NEC |
N-Channel MOS Field Effect Power Transistor |
|
| 3 | 2SK1061 |
Toshiba Semiconductor |
N-CHANNEL MOS TRANSISTOR |
|
| 4 | 2SK1062 |
Toshiba Semiconductor |
N-CHANNEL MOS TRANSISTOR |
|
| 5 | 2SK1063 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|