| No. | Partie # | Fabricant | Description | Fiche Technique |
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Samwin |
N-channel MOSFET TO-220 TO-263 High ruggedness Low RDS(ON) (Typ 7.1mΩ)@VGS=10V Low Gate Charge (Typ 59nC) Improved dv/dt Capability 100% Avalanche Tested Application: Synchronous Rectification, Li Battery Protect Board, Inverter 1 23 1 23 General De |
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Samwin |
N-channel MOSFET TO-252 High ruggedness Low RDS(ON) (Typ 6.3mΩ)@VGS=10V Low Gate Charge (Typ 75nC) Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification, Li Battery Protect Board, Inverter 12 3 1. Gate 2.Drain 3.Source |
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Samwin |
N-channel MOSFET TO-220 ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 5.2mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 94nC) ⚫ Improved dv/dt Capability ⚫ 100% Avalanche Tested ⚫ Application:Synchronous Rectification, Li Battery Protect Board, Inverter General Description 12 3 1. |
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Samwin |
N-channel MOSFET TO-220 High ruggedness Low RDS(ON) (Typ 6.3mΩ)@VGS=10V Low Gate Charge (Typ 107nC) Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification, Li Battery Protect Board, Inverter 12 3 General Description |
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Samwin |
N-channel MOSFET N-channel Enhanced mode TO-220FTS MOSFET High ruggedness Low RDS(ON) (Typ 9.4mΩ)@VGS=4.5V (Typ 7.8mΩ)@VGS=10V Low Gate Charge (Typ 42nC) Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification, Li Battery P |
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Samwin |
N-channel MOSFET TO-247 High ruggedness Low RDS(ON) (Typ 3.6mΩ)@VGS=10V Low Gate Charge (Typ 132nC) Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification, Inverter , Li Battery Protect Board 12 3 1. Gate 2. Drain 3. Sour |
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Samwin |
N-channel MOSFET N-channel Enhanced mode TO-220/TO-263 MOSFET High ruggedness Low RDS(ON) (Typ 5.6mΩ)@VGS=10V Low Gate Charge (Typ 94nC) Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification, Li Battery Protect Board, Inv |
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