Samsung semiconductor KM7 fiche technique

No.	Partie #	Fabricant	Description
1	KM736V687A	Samsung Semiconductor	64Kx36-Bit Synchronous Burst SRAM • Synchronous Operation. • On-Chip Address Counter. • Write Self-Timed Cycle. • On-Chip Address and Control Registers. • VDD= 3.3V+0.3V/-0.165V Power Supply. • VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O. • 5V
2	KM718V849	Samsung Semiconductor	(KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O. • Byte Writable Function. • Enable clock and suspend operation. • Single READ/WRITE control pin. • Self-Timed Write Cycle. •
3	KM736V749	Samsung Semiconductor	(KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O. • Byte Writable Function. • Enable clock and suspend operation. • Single READ/WRITE control pin. • Self-Timed Write Cycle. •
4	KM736V790	Samsung Semiconductor	128Kx36 Synchronous SRAM • Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • VDD= 3.3V+0.3V/-0.165V Power Supply. • VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V
5	KM736V747	Samsung Semiconductor	(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O • Byte Writable Function. • Enable clock and suspend operation. • Single READ/WRITE control pin. • Self-Timed Write Cycle. • T
6	KM718V847	Samsung Semiconductor	(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O • Byte Writable Function. • Enable clock and suspend operation. • Single READ/WRITE control pin. • Self-Timed Write Cycle. • T
7	KM736V787	Samsung Semiconductor	128Kx36 Synchronous SRAM • Synchronous Operation. • On-Chip Address Counter. • Write Self-Timed Cycle. • On-Chip Address and Control Registers. • VDD= 3.3V+0.3V/-0.165V Power Supply. • VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O. • 5V
8	KM736V795	Samsung Semiconductor	128Kx36 Synchronous SRAM • Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • VDD= 3.3V+0.3V/-0.165V Power Supply. • I/O Supply Voltage 2.5V+0.4V/-0.13V. • 5V Tole
9	KM736V687	Samsung Semiconductor	64Kx36-Bit Synchronous Burst SRAM Synchronous Operation. On-Chip Address Counter. Write Self-Timed Cycle. On-Chip Address and Control Registers. Single 3.3V ±5% Power Supply. 5V Tolerant Inputs except I/O Pins. Byte Writable Function. Global Write Enable Controls a full bus-width wri
10	KM736V887	Samsung semiconductor	(KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM • Synchronous Operation. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O • 5V To
11	KM736V789	Samsung Semiconductor	128Kx36 Synchronous SRAM • Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • VDD= 3.3V+0.3V/-0.165V Power Supply. • VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V
12	KM718V089	Samsung semiconductor	512Kx36 & 1Mx18 Synchronous SRAM • Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • VDD= 3.3V +0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V +0.165V/-0.165V for
13	KM736V989	Samsung semiconductor	512Kx36 & 1Mx18 Synchronous SRAM • Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • VDD= 3.3V +0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V +0.165V/-0.165V for
14	KM736V689A	Samsung Semiconductor	64Kx36-Bit Synchronous Pipelined Burst SRAM • • • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. VDD= 3.3V+0.3V/-0.165V Power Supply. VDDQ Supply Voltage 3.3V+0
15	KM736V689	Samsung Semiconductor	64Kx36-Bit Synchronous Pipelined Burst SRAM • • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. VDD= 3.3V-5%/+10% Power Supple 5V Tolerant Inputs Except I/O Pins
16	KM736FV4021	Samsung semiconductor	(KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM • • • • • • • • • • • • 128Kx36 or 256Kx18 Organizations. 3.3V Core Power Supply. LVTTL Input and Output Levels. Differential, PECL Clock Inputs K, K. Synchronous Read and Write Operation Registered Input and Registered Output Internal Pipeline Latch
17	KM718FV4021	Samsung semiconductor	(KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM • • • • • • • • • • • • 128Kx36 or 256Kx18 Organizations. 3.3V Core Power Supply. LVTTL Input and Output Levels. Differential, PECL Clock Inputs K, K. Synchronous Read and Write Operation Registered Input and Registered Output Internal Pipeline Latch
18	KM732V589A	Samsung Semiconductor	32Kx32-Bit Synchronous Pipelined Burst SRAM • • • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. VDD = 3.3V-5%/+10% Power Supply 5V Tolerant Inputs except I/O P
19	KM732V589L	Samsung Semiconductor	32Kx32-Bit Synchronous Pipelined Burst SRAM • • • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. VDD = 3.3V-5%/+10% Power Supply 5V Tolerant Inputs except I/O P
20	KM732V595A	Samsung Semiconductor	32Kx32-Bit Synchronous Pipelined Burst SRAM • • • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. Core Supply Voltage : 3.3V±5% 5V Tolerant Inputs except I/O Pin