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KM736V887 |
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| Part Number | KM736V887 |
| Manufacturer | Samsung semiconductor |
| Description | The KM736V887 and KM718V987 are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 256K(512... |
| Features |
• Synchronous Operation. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O • 5V Tolerant Inputs Except I/O Pins. • Byte Writable Function. • Global Write Enable Controls a full bus-width write. • Power Down State via ZZ Signal. • LBO Pin allows a choice of either a interleaved burst or a linear burst. • Three Chip Enables for simple depth expansion with No Data Contention only for TQFP. • Asynchronous Output Enable Control. • AD... |
| Document |
 KM736V887 Data Sheet
PDF 574.50KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KM736V687 |
Samsung Semiconductor |
64Kx36-Bit Synchronous Burst SRAM |
|
| 2 | KM736V687A |
Samsung Semiconductor |
64Kx36-Bit Synchronous Burst SRAM |
|
| 3 | KM736V689 |
Samsung Semiconductor |
64Kx36-Bit Synchronous Pipelined Burst SRAM |
|
| 4 | KM736V689A |
Samsung Semiconductor |
64Kx36-Bit Synchronous Pipelined Burst SRAM |
|
| 5 | KM736V747 |
Samsung Semiconductor |
(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM |
|