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KM718V849 |
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| Part Number | KM718V849 |
| Manufacturer | Samsung Semiconductor |
| Description | The KM736V749 and KM718V849 are 4,718,592 bits Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, ... |
| Features |
• 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O. • Byte Writable Function. • Enable clock and suspend operation. • Single READ/WRITE control pin. • Self-Timed Write Cycle. • Three Chip Enable for simple depth expansion with no data contention • Α interleaved burst or a linear burst mode. • Asynchronous output enable control. • Power Down mode. • TTL-Level Three-State Outputs. • 100-TQFP-1420A Package. GENERAL DESCRIPTION The KM736V749 and KM718V849 are 4,718,592 bits Synchronous Static SRAMs. The NtRAMTM, or No Turnar... |
| Document |
 KM718V849 Data Sheet
PDF 288.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KM718V847 |
Samsung Semiconductor |
(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM |
|
| 2 | KM718V887 |
Samsung semiconductor |
256Kx18 Synchronous SRAM |
|
| 3 | KM718V089 |
Samsung semiconductor |
512Kx36 & 1Mx18 Synchronous SRAM |
|
| 4 | KM718V987 |
Samsung semiconductor |
(KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM |
|
| 5 | KM718FV4021 |
Samsung semiconductor |
(KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
|