Samsung semiconductor KFG fiche technique

No.	Partie #	Fabricant	Description
1	KFG1G16U2B-DIB6	Samsung semiconductor	1Gb OneNAND B-die
2	KFG1G16U2B	Samsung semiconductor	1Gb OneNAND B-die
3	KFG1G1612M-DEB5	Samsung semiconductor	FLASH MEMORY including: • A BootRAM and bootloader • Two independent bi-directional 2KB DataRAM buffers • A High-Speed x16 Host Interface • On-chip Error Correction • On-chip NOR interface controller This on-chip integration enables system designers to reduce ext
4	KFG2816Q1M-DEB	Samsung semiconductor	(KFG2816Q1M-DEB / KFG2816U1M-DIB) Flash Memory • Design Technology: 0.12µm • Voltage Supply - 1.8V device(KFG2816Q1M) : 1.7V~1.95V - 3.3V device(KFG2816U1M) : 2.7V~3.6V • Organization - Host Interface:16bit • Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2KB for DataRAM • NAND Array - Page Size
5	KFG2816U1M-DIB	Samsung semiconductor	(KFG2816Q1M-DEB / KFG2816U1M-DIB) Flash Memory • Design Technology: 0.12µm • Voltage Supply - 1.8V device(KFG2816Q1M) : 1.7V~1.95V - 3.3V device(KFG2816U1M) : 2.7V~3.6V • Organization - Host Interface:16bit • Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2KB for DataRAM • NAND Array - Page Size
6	KFG2G16Q2M	Samsung semiconductor	2Gb OneNAND M-Die including: xA BootRAM and bootloader xTwo independent bi-directional 2KB DataRAM buffers xA High-Speed x16 Host Interface xOn-chip Error Correction xOn-chip NOR interface controller This on-chip integration enables system designers to
7	KFG1G16Q2M	Samsung semiconductor	FLASH MEMOR including: • A BootRAM and bootloader • Two independent bi-directional 2KB DataRAM buffers • A High-Speed x16 Host Interface • On-chip Error Correction • On-chip NOR interface controller This on-chip integration enables system designers to reduce ext
8	KFG1216Q2M	Samsung semiconductor	FLASH MEMORY ♦ Architecture • Design Technology: 0.12um • Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V • Organization - Host Interface:16bit • Internal BufferRAM(5K Bytes) - 1KB
9	KFG1216D2M	Samsung semiconductor	FLASH MEMORY ♦ Architecture • Design Technology: 0.12um • Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V • Organization - Host Interface:16bit • Internal BufferRAM(5K Bytes) - 1KB
10	KFG1216U2M	Samsung semiconductor	FLASH MEMORY ♦ Architecture • Design Technology: 0.12um • Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V • Organization - Host Interface:16bit • Internal BufferRAM(5K Bytes) - 1KB
11	KFG5616x1A-xxB5	Samsung semiconductor	OneNAND Specification FLASH MEMORY including: • A BootRAM and bootloader • Two independent bi-directional 1KB DataRAM buffers • A High-Speed x16 Host Interface • On-chip Error Correction • On-chip NOR interface controller This on-chip integration enables system designers to reduce ext
12	KFG5616Q1A-DEB5	Samsung semiconductor	OneNAND Specification FLASH MEMORY including: • A BootRAM and bootloader • Two independent bi-directional 1KB DataRAM buffers • A High-Speed x16 Host Interface • On-chip Error Correction • On-chip NOR interface controller This on-chip integration enables system designers to reduce ext
13	KFG5616Q1A-PEB5	Samsung semiconductor	OneNAND Specification FLASH MEMORY including: • A BootRAM and bootloader • Two independent bi-directional 1KB DataRAM buffers • A High-Speed x16 Host Interface • On-chip Error Correction • On-chip NOR interface controller This on-chip integration enables system designers to reduce ext
14	KFG5616D1A-DEB5	Samsung semiconductor	OneNAND Specification FLASH MEMORY including: • A BootRAM and bootloader • Two independent bi-directional 1KB DataRAM buffers • A High-Speed x16 Host Interface • On-chip Error Correction • On-chip NOR interface controller This on-chip integration enables system designers to reduce ext
15	KFG5616D1A-PEB5	Samsung semiconductor	OneNAND Specification FLASH MEMORY including: • A BootRAM and bootloader • Two independent bi-directional 1KB DataRAM buffers • A High-Speed x16 Host Interface • On-chip Error Correction • On-chip NOR interface controller This on-chip integration enables system designers to reduce ext
16	KFG5616U1A-DIB5	Samsung semiconductor	OneNAND Specification FLASH MEMORY including: • A BootRAM and bootloader • Two independent bi-directional 1KB DataRAM buffers • A High-Speed x16 Host Interface • On-chip Error Correction • On-chip NOR interface controller This on-chip integration enables system designers to reduce ext
17	KFG5616U1A-PIB5	Samsung semiconductor	OneNAND Specification FLASH MEMORY including: • A BootRAM and bootloader • Two independent bi-directional 1KB DataRAM buffers • A High-Speed x16 Host Interface • On-chip Error Correction • On-chip NOR interface controller This on-chip integration enables system designers to reduce ext
18	KFG5616Q1M-DEB	Samsung semiconductor	OneNAND256 FLASH MEMORY • Design Technology: 0.12µm • Voltage Supply - 1.8V device(KFG5616Q1M) : 1.7V~1.95V - 2.65V device(KFG5616D1M) : 2.4V~2.9V - 3.3V device(KFG5616U1M) : 2.7V~3.6V • Organization - Host Interface:16bit • Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2
19	KFG5616D1M-DEB	Samsung semiconductor	OneNAND256 FLASH MEMORY • Design Technology: 0.12µm • Voltage Supply - 1.8V device(KFG5616Q1M) : 1.7V~1.95V - 2.65V device(KFG5616D1M) : 2.4V~2.9V - 3.3V device(KFG5616U1M) : 2.7V~3.6V • Organization - Host Interface:16bit • Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2
20	KFG5616U1M-DIB	Samsung semiconductor	OneNAND256 FLASH MEMORY • Design Technology: 0.12µm • Voltage Supply - 1.8V device(KFG5616Q1M) : 1.7V~1.95V - 2.65V device(KFG5616D1M) : 2.4V~2.9V - 3.3V device(KFG5616U1M) : 2.7V~3.6V • Organization - Host Interface:16bit • Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2