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KFG1216Q2M |
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| Part Number | KFG1216Q2M |
| Manufacturer | Samsung semiconductor |
| Description | for below operations -. Reset -. Write Protection -. Burst Read Latency -. Dual Operation -. Invalid block definition and Identification method -. Error in write or read operation -. ECC 3. Revised p... |
| Features |
♦ Architecture
• Design Technology: 0.12um • Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V • Organization - Host Interface:16bit • Internal BufferRAM(5K Bytes) - 1KB for BootRAM, 4KB for DataRAM • NAND Array - Page Size : (2K+64)bytes - Block Size : (128K+4K)bytes FLASH MEMORY ♦ Performance • Host Interface type - Synchronous Burst Read : Clock Frequency: up to 54MHz : Linear Burst - 4, 8, 16, 32 words with wrap-around : Continuous Sequential Burst(1K words) - Asynchronous Random Read : Access time of 76ns -... |
| Document |
 KFG1216Q2M Data Sheet
PDF 1.30MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KFG1216Q2A |
Samsung semiconductor |
FLASH MEMORY |
|
| 2 | KFG1216D2A |
Samsung semiconductor |
FLASH MEMORY |
|
| 3 | KFG1216D2M |
Samsung semiconductor |
FLASH MEMORY |
|
| 4 | KFG1216U2A |
Samsung semiconductor |
FLASH MEMORY |
|
| 5 | KFG1216U2M |
Samsung semiconductor |
FLASH MEMORY |
|