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KFG2816U1M-DIB |
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| Part Number | KFG2816U1M-DIB |
| Manufacturer | Samsung semiconductor |
| Description | 5. Added OTP erase case NOTE 6. Revised case definitions of Interrupt Status Register 7. Added a NOTE to Command register 8. Added ECClogSector Information table 9. Removed ’data unit based data handl... |
| Features |
• Design Technology: 0.12µm • Voltage Supply - 1.8V device(KFG2816Q1M) : 1.7V~1.95V - 3.3V device(KFG2816U1M) : 2.7V~3.6V • Organization - Host Interface:16bit • Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2KB for DataRAM • NAND Array - Page Size : (1K+32)bytes - Block Size : (64K+2K)bytes FLASH MEMORY ♦ Architecture www.DataSheet4U.com ♦ Performance • Host Interface type - Synchronous Burst Read : Clock Frequency: up to 54MHz : Linear Burst - 4 , 8 , 16 , 32 words with wrap-around : Continuous Sequential Burst(512 words) - Asynchronous Random Read : Access time of 76ns - Asynchronous ... |
| Document |
 KFG2816U1M-DIB Data Sheet
PDF 1.24MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KFG2816Q1M-DEB |
Samsung semiconductor |
(KFG2816Q1M-DEB / KFG2816U1M-DIB) Flash Memory |
|
| 2 | KFG2G16Q2M |
Samsung semiconductor |
2Gb OneNAND M-Die |
|
| 3 | KFG1216D2A |
Samsung semiconductor |
FLASH MEMORY |
|
| 4 | KFG1216D2M |
Samsung semiconductor |
FLASH MEMORY |
|
| 5 | KFG1216Q2A |
Samsung semiconductor |
FLASH MEMORY |
|