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SamHop Microelectronics STB DataSheet

No. Partie # Fabricant Description Fiche Technique
1
STB432S

SamHop Microelectronics
N-Channel Logic Enhancement Mode Field Effect Transistor
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 60A R DS(ON) (m Ω) Max 9 @ VGS=10V 11 @ VGS=4.5V D G S G D S S TB S E R IE S TO-263(DD-P AK) S TP S E R IE S TO-22
Datasheet
2
STB1082

SamHop Microelectronics
N-Channel Enhancement Mode Field Effect Transistor
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate
Datasheet
3
STB440S

SamHop Microelectronics
N-Channel MOSFET
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 65A R DS(ON) (m Ω) Max 8 @ VGS=10V 11.5 @ VGS=4.5V D G S G D S S TB S E R IE S TO-263(DD-P AK) S TP S E R IE S TO-
Datasheet
4
STB31L01

SamHop Microelectronics
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Super high dense cell design for low R DS(ON). Rugged and reliable. TO-263 Package. ID 26A R DS(ON) (m ) Typ 49 @ VGS=10V D G S S TB S E R IE S TO-263(DD-P AK) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM
Datasheet
5
STB520N

SamHop Microelectronics
N-Channel Enhancement Mode Field Effect Transistor
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate
Datasheet
6
STB28N15

SamHop Microelectronics
N-Channel Enhancement Mode Field Effect Transistor
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltag
Datasheet
7
STB10N03

SamHop Microelectronics
N-Channel Enhancement Mode Field Effect Transistor
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit V
Datasheet
8
STB820S

SamHop Microelectronics
N-Channel Enhancement Mode Field Effect Transistor
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless other
Datasheet
9
STB438S

SamHop Microelectronics
N-Channel Enhancement Mode Field Effect Transistor
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise no
Datasheet
10
STB438A

SamHop Microelectronics
N-Channel Enhancement Mode Field Effect Transistor
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise no
Datasheet
11
STB434S

SamHop Microelectronics
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-263 Package. ID 60A R DS(ON) (m Ω) Max 9.2 @ VGS=10V 11.5 @ VGS=4.5V D D G S G D S G STP SERIES TO-220 STB SERIES TO-263(DD-PAK) S ABSOLUTE MAXIMUM RATINGS (
Datasheet
12
STB8444

SamHop Microelectronics
N-Channel MOSFET
Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-263 Package. ID 80A R DS(ON) (m Ω) Max 4.8 @ VGS=10V D D G S G D S G STP SERIES TO-220 STB SERIES TO-263(DD-PAK) S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless
Datasheet
13
STB4410

SamHop Microelectronics
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G S S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless othe
Datasheet



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