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STB520N |
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| Part Number | STB520N |
| Manufacturer | SamHop Microelectronics |
| Description | STB520NGreen Product Sa mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 200V 22A 65 @ VGS=10V FEA... |
| Features |
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-263 package.
D
GS S TB S E R IE S T O -263(DD-P AK )
D
G S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TC=25°C TC=70°C
200 ±20 22 18.4
IDM -Pulsed a c
64
EAS Single Pulse Avalanche Energy d
110
TC=25°C PD Maximum Power Dissipation
TC=70°C
75 52.5
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R JC R JA
Thermal Resistance, Junction-to-Case Ther... |
| Document |
 STB520N Data Sheet
PDF 105.92KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | STB5200 |
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| 2 | STB50NE08 |
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| 3 | STB50NE10 |
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| 4 | STB50NE10L |
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| 5 | STB50NF25 |
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