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STMicroelectronics |
STW12NK90Z Type STW12NK90Z ■ ■ ■ ■ ■ VDSS 900V RDS(on) <0.88Ω ID 11A pW 230W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility TO-247 Description The SuperMESH |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS RDS(on) (@Tjmax) max ID PW STP12NK60Z STF12NK60Z STW12NK60Z 650 V 650 V 650 V <0.640 Ω 10 A 150 W <0.640 Ω 10 A 35 W <0.640 Ω 10 A 150 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low |
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STMicroelectronics |
STW12NA60 Parameter Value STH/STW12NA60 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 1 |
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STMicroelectronics |
STW12NK80Z OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
STW12NK90Z Order code STW12NK90Z VDSS 900 V RDS(on) max ID Pw < 0.88 Ω 11 A 230 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Very good manufacturing repeatability Application ■ Sw |
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STMicroelectronics |
MEMS digital output dual motion and temperature sensor • Ultralow power consumption: 50 nA in power-down mode, below 1 µA in active low-power mode • Very low noise: down to 1.3 mg RMS in low-power mode • 0.8 °C (typ. accuracy) embedded temperature sensor • Multiple operating modes with multiple bandwidth |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID STW12N170K5 1700 V 2.9 Ω 5A • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • Zener-protected PTOT 250 W Applications • Switching applications Description T |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCT040W120G3AG VDS 1200 V RDS(on) typ. 40 mΩ ID 40 A HiP247 3 2 1 D(2, TAB) • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • |
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STMicroelectronics |
STW12NK95Z www.DataSheet4U.com Type VDSS (@Tjmax) RDS(on) ID PW STW12NK95Z 950 V < 0.90Ω 10 A 230W ■ Gate charge minimized ■ 100% avalanche tested ■ Extremely high dv/dt capability Description The SuperMESH™ series is obtained through an extreme optimiz |
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STMicroelectronics |
N-CHANNEL Power MOS MOSFET Order codes VDS RDS(on) max. ID PTOT STH12N120K5-2 STP12N120K5 1200 V STW12N120K5 0.69 Ω 12 A 250 W STWA12N120K5 TO-247 3 2 1 3 2 1 TO-247 long leads Figure 1: Internal schematic diagram D(TAB) D(2, TAB) G(1) G(1) S(2, 3) (H 2PAK-2) |
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STMicroelectronics |
MEMS digital output motion sensor • Ultra-low power consumption: 50 nA in power-down mode, below 1 µA in active low-power mode • Very low noise: down to 1.3 mg RMS in low-power mode • Multiple operating modes with multiple bandwidths • Android stationary detection, motion detection • |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCT015W120G3-4AG VDS 1200 V RDS(on) typ. 15 mΩ ID 129 A HiP247-4 2 34 1 Drain(1, TAB) • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction |
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STMicroelectronics |
STW12NC60 TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 12 8 18 190 1.52 3 –65 to 150 150 (1)ISD ≤11A, di/dt ≤100A/ |
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STMicroelectronics |
Programmable electronic power breaker • Real-time input power sensing • Input voltage range: from 10.5 V to 18 V • Continuous current typ.: 1.5 A • P-channel on resistance typ.: 50 mΩ • Power limit accuracy typ.: 3% • Undervoltage lockout • Adjustable power limitation • PWM mode • Progra |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCT040W120G3-4AG VDS 1200 V RDS(on) typ. 40 mΩ ID 40 A HiP247-4 2 34 1 Drain(1, TAB) • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Junction-case Max 0.63 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES IEBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1500 V V CE = 1500 V V EB = |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS RDS(on) (@Tjmax) max ID PW STP12NK60Z STF12NK60Z STW12NK60Z 650 V 650 V 650 V <0.640 Ω 10 A 150 W <0.640 Ω 10 A 35 W <0.640 Ω 10 A 150 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS RDS(on) (@Tjmax) 950 V < 0.90Ω ID 10 A PW 230W STW12NK95Z ■ ■ ■ Gate charge minimized 100% avalanche tested Extremely high dv/dt capability TO-247 Description The SuperMESH™ series is obtained through an extreme op |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω ID 1 3 3 12 STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N 10A 10A 10A(1) 10A 10A D²PAK I²PAK TO-247 3 1 2 3 1 2 1. |
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STMicroelectronics |
N-CHANNEL POWER MOSFET TO-220FP TO-3PF Order code VDS RDS(on) max. ID PTOT STF12N120K5 1200 V STFW12N120K5 0.69 Ω 40 W 12 A 63 W • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche test |
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