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W12NA60 |
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| Part Number | W12NA60 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
| Features |
Parameter Value STH/STW12NA60 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Unit STH12NA60FI V V V 7 4.4 48 80 0.64 4000 A A A W W/o C V o o 600 600 ± 30 12 7.6 48 190 1.52 -65 to 150 150 C C ( •) Pulse width limited by safe operating area November ... |
| Document |
 W12NA60 Data Sheet
PDF 275.90KB |
| Distributor | Stock | Price | Buy |
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