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BUW1215 |
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| Part Number | BUW1215 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The BUW1215 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. 2 1 TO-247 INTERNAL SCHEMATIC D... |
| Features |
Junction-case Max 0.63
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES IEBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 T j = 125 o C Min. Typ. Max. 0.2 2 100 Unit mA mA µA V
V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO VCE(sat) ∗ V BE(sat) ∗ h FE ∗ Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage... |
| Document |
 BUW1215 Data Sheet
PDF 208.12KB |
| Distributor | Stock | Price | Buy |
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