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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS /W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut- |
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STMicroelectronics |
SMALL SIGNAL PNP TRANSISTOR |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE K NC A NC K A K2 K1 A K2 A K1 BAT54W DESCRIPTION Schottky barrier diodes encapsulated either in SOT-323 or SOD-323 small SMD pack |
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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEX Collector Cut-off Current (VBE = -3 V) IBEX Base Cut-off Current (VBE = -3 V) V(BR)CEO∗ Collector-Emitter Breakdown Voltage (IB = 0) |
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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS /W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut- |
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STMicroelectronics |
SMALL SIGNAL PNP TRANSISTOR |
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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS TRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CE = 30 V V CE = 30 V I C = 10 µ A T amb = 150 o C 50 Min. Typ . Max. 15 5 Un it nA µA V V (BR)CES ∗ Col |
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STMicroelectronics |
Small signal Schottky diodes Low conduction and reverse losses Negligible switching losses Low forward and reverse recovery times Extremely fast switching Surface mount device Low capacitance diode ECOPACK®2 compliant component Description The BAT54 series uses 40 |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE K NC A NC K A K2 K1 A K2 A K1 BAT54W DESCRIPTION Schottky barrier diodes encapsulated either in SOT-323 or SOD-323 small SMD pack |
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STMicroelectronics |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY allows to discriminate the nature of the detected fault. To protect the device against short-circuit and overcurrent condition, the thermal protection turns the integrated PowerMOS off at a minimum junction temperature of 140°C. When this temperature |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE = 25°C T amb = 25°C Test Conditions VR = 1V IF = 20mA f = 1GHz f = 1MHz Krakauer Method 6 Min. Typ. Max. 1.1 100 7 Unit pF ps dB (1) Pulse test: tp ≤ 300µs δ < 2%. (2) Noise figure test : - diode is inserted in a tuned stripline circuit - local osci |
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STMicroelectronics |
Smartcard 32-Bit RISC MCU I 32-BIT RISC CPU WITH 24-BIT LINEAR MEMORY ADDRESSING I 768 KBYTES USER FLASH I 16 KBYTES USER RAM I 16 KBYTES USER SECONDARY RAM I 256 KBYTES USER PAGE-FLASH 32-BIT RISC CPU I DUAL INSTRUCTION SET, JAVACARD™ AND NATIVE I 4-STAGE PIPELINE I 16 GENER |
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STMicroelectronics |
Quad high side smart power solid state relay • Operating output current: 0.7 A (VN340SP-E) or 1 A (VN340SP-33-E) • Digital I/O clamped at 32 V minimum voltage • Shorted load and overtemperature protections • Protection against loss of ground • Built-in current limiter • Undervoltage shutdown • |
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STMicroelectronics |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY Figure 1. Package Type VDSS RDS(on) In(1) VCC VND10B 40 V 0.1 Ω 3.4 A 26 V )Note: 1. In= Nominal current according to ISO definition for high t(sside automotive switch. The Nominal Current is the current at Tc = 85 °C for battery voltage of |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES ERISTICS STATIC CHARACTERISTICS Symbol IR * Tj = 25°C Tj = 100°C VF * IF = 1A IF = 3A * Pulse test: tp ≤ 300µs δ < 2%. Test Conditions VR = VRRM Min. Typ. Max. 0.5 10 Unit mA Tj = 25°C 0.55 0.85 V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C T |
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STMicroelectronics |
FORWARD SYNCHRONOUS RECTIFIERS SMART DRIVER makes discontinuous conduction mode possible and prevents the freewheeling mosfet from sinking current from the output. STSR2 automatically turns off the outputs when duty-cycle is lower than 13%, while STSR2M works even at very low duty-cycle values |
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STMicroelectronics |
FORWARD SYNCHRONOUS RECTIFIERS SMART DRIVER makes discontinuous conduction mode possible and prevents the freewheeling mosfet from sinking current from the output. STSR2P automatically turns off the outputs when duty-cycle is lower than 13%, while STSR2PM works even at very low duty-cycle valu |
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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS case = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 30 V VCB = 30 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut-off Current (IC = 0) Collector-Base Br |
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STMicroelectronics |
Small signal Schottky diodes Very low conduction losses Negligible switching losses Low forward and reverse recovery times Extremely fast switching Surface mount device Low capacitance diode ECOPACK®2 and RoHS compliant component Table 1. Device summary Symbol V |
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STMicroelectronics |
Synchronous rectifier smart driver Secondary side synchronous rectifier controller optimized for LLC resonant converters Protection against current reversal Safe management of load transient, light load and startup condition Matched turn-off thresholds Intelligent automatic |
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