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STMicroelectronics |
STP6NB50FP Tj March 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o |
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STMicroelectronics |
STP6NK60ZFP Type STB6NK60Z STB6NK60Z-1 STP6NK60ZFP STP6NK60Z VDSS 600 V 600 V 600 V 600 V RDS(on) ID PW < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 30 W < 1.2 Ω 6 A 110 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimi |
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STMicroelectronics |
STP6NK90ZFP OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
STP6NA60FP GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 o C o Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Volta |
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STMicroelectronics |
N-CHANNEL MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
STP6NK60 OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-CHANNEL MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.92Ω <0.92Ω <0.92Ω <0.92Ω ID 4.6A 1 3 2 1 3 2 STD6NM60N STD6NM60N-1 STF6NM60N STP6NM60N 4.6A 4.6A (1) 4.6A TO-220 TO-220FP 1. Limited only by maximum temperature allowed 1 |
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STMicroelectronics |
N-CHANNEL MOSFET ent (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 250 250 ± 20 6 4 24 70 0.56 5 –65 to 150 150 (1) ISD≤ 6A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj≤Tj |
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STMicroelectronics |
N-channel Power MOSFET Type STP6NK90Z STP6NK90ZFP STB6NK90Z STW7NK90Z VDSS 900 V 900 V 900 V 900 V RDS(on) <2Ω <2Ω <2Ω <2Ω ID 5.8 A 5.8 A 5.8 A 5.8 A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ |
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STMicroelectronics |
STP6NA60 Unit V DS V DGR V GS ID ID I DM ( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (p |
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STMicroelectronics |
STP6NK90Z OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
STP6NA60FI n Current (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM( •) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating J |
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STMicroelectronics |
N-CHANNEL MOSFET Type STB6NK60Z STB6NK60Z-1 STP6NK60ZFP STP6NK60Z VDSS 600 V 600 V 600 V 600 V RDS(on) ID PW < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 30 W < 1.2 Ω 6 A 110 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimi |
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STMicroelectronics |
N-channel Power MOSFET TAB TO-220 1 23 D(2, TAB) Order code VDS STP6N80K5 800 V • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications RDS(on) max. 1.6 Ω ID |
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STMicroelectronics |
STP6NK60ZPF OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C |
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