| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω*nC 11 A ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Swi |
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STMicroelectronics |
N-Channel Power MOSFET TAB Order code VDS at TJ max. RDS(on) max. ID STI11NM60ND 650 V 450 mΩ 10 A t(s) 1 2 3 uc I²PAK rod D(2, TAB) • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • Hig |
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STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω*nC 11 A ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Swi |
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STMicroelectronics |
N-channel Power MOSFETs 3 2 1 TO-220FP 1 23 I2PAKFP Figure 1. Internal schematic diagram ' * 6 AM01476v1 Order codes STF11N65M2 STFI11N65M2 VDS 650 V RDS(on) max ID 0.67 Ω 7A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Lo |
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STMicroelectronics |
N-channel MOSFET 123 TO-220FP TO-2201 23 Order codes STF11NM65N VDS RDS(on) max. ID t(s) 123 I2PAKFP uc (TO-281) STFI11NM65N 650 V 455 mΩ 11 A STP11NM65N • 100% avalanche tested d D(2, TAB) • Low input capacitance and gate charge ro • Low gate input r |
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STMicroelectronics |
N-channel Power MOSFET 1 23 I 2 PAKFP (TO-281) D(2) Order code VDS RDS(on) max. STFI11N60M2-EP 600 V 0.595 Ω • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected ID |
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