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I11NM80 |
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| Part Number | I11NM80 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. The... |
| Features |
Order codes VDSS
RDS(on) max
RDS(on)*Qg
ID
STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80
< 0.40 Ω
14Ω*nC
11 A
■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's prop... |
| Document |
 I11NM80 Data Sheet
PDF 869.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | I1101-6TJN0906C |
Illuminant |
TFT LCM |
|
| 2 | I1-5680 |
Harris Semiconductor |
HI1-5680 |
|
| 3 | I121 |
ILSI |
(I121 / I122) Leaded Oscillator |
|
| 4 | I122 |
ILSI |
(I121 / I122) Leaded Oscillator |
|
| 5 | I1513-6SEN1212A |
Illuminant |
TFT LCM |
|