STFI11NM65N |
Part Number | STFI11NM65N |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | O S(3) uct(s) - AM01475v1_noZen These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure... |
Features |
123
TO-220FP
TO-2201 23
Order codes STF11NM65N
VDS
RDS(on) max.
ID
t(s) 123
I2PAKFP
uc (TO-281)
STFI11NM65N
650 V
455 mΩ
11 A
STP11NM65N
• 100% avalanche tested d D(2, TAB) • Low input capacitance and gate charge ro • Low gate input resistance te P Applications ole G(1) • Switching applications bs Description O S(3) uct(s) - AM01475v1_noZen These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-... |
Document |
STFI11NM65N Data Sheet
PDF 532.10KB |
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