| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
very fast IGBT ■ ■ ■ ■ Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop freewheeling diode 1 3 1 3 2 2 Applications ■ ■ Induction cooking, microwave ovens Soft-switching applications TO-247 TO-3P Desc |
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STMicroelectronics |
Dual 650V power Schottky silicon carbide diode No or negligible reverse recovery Switching behavior independent of temperature Suited for specific bridge-less topologies High forward surge capability Insulated package: – Capacitance: 7 pF – Insulated voltage: 2500 V rms Datasheet - pro |
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STMicroelectronics |
HIGH EFFICIENCY ULTRAFAST DIODE AND BENEFITS s Suited for SMPS s Low losses s Low forward and reverse recovery times s High surge current capability s High junction temperature s Insulated package: TO-220FPAB: Insulation voltage = 2000 VDC Capacitance = 12 pF DESCRIPTION Dual cente |
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STMicroelectronics |
STH13NB60FI Low Voltage Operation (2.7 V to 12 V) Calibrated Directly in ؇C 10 mV/ ؇C Scale Factor ؎ 2؇C Accuracy Over Temperature (typ) ؎ 0.5؇C Linearity (typ) Stable with Large Capacitive Loads Specified –40؇C to +125؇C, Operation to +150؇C Less than 60 mA Qui |
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STMicroelectronics |
very fast IGBT ■ ■ ■ ■ Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop freewheeling diode 1 3 1 3 2 2 Applications ■ ■ Induction cooking, microwave ovens Soft-switching applications TO-247 TO-3P Desc |
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STMicroelectronics |
HIGH EFFICIENCY ULTRAFAST DIODE AND BENEFITS s Suited for SMPS s Low losses s Low forward and reverse recovery times s High surge current capability s High junction temperature s Insulated package: TO-220FPAB: Insulation voltage = 2000 VDC Capacitance = 12 pF DESCRIPTION Dual cente |
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STMicroelectronics |
Dual 650V power Schottky silicon carbide diode No or negligible reverse recovery Switching behavior independent of temperature Suited for specific bridge-less topologies High forward surge capability Insulated package: – Capacitance: 7 pF – Insulated voltage: 2500 V rms Datasheet - pro |
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STMicroelectronics |
N-channel Power MOSFET Order codes STF130N10F3 STFI130N10F3 STH130N10F3-2 STP130N10F3 ■ ■ VDSS RDS(on) max. 9.6 mΩ ID 3 46 A TO-220FP 1 2 1 2 3 100 V 9.3 mΩ 9.6 mΩ I²PAKFP 120 A TAB TAB Ultra low on-resistance 100% avalanche tested 2 1 3 1 2 3 H²PAK-2 TO-2 |
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STMicroelectronics |
N-channel Power MOSFET Order codes STF130N10F3 STFI130N10F3 STH130N10F3-2 STP130N10F3 ■ ■ VDSS RDS(on) max. 9.6 mΩ ID 3 46 A TO-220FP 1 2 1 2 3 100 V 9.3 mΩ 9.6 mΩ I²PAKFP 120 A TAB TAB Ultra low on-resistance 100% avalanche tested 2 1 3 1 2 3 H²PAK-2 TO-2 |
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STMicroelectronics |
very fast IGBT ■ ■ ■ ■ Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop freewheeling diode 1 3 1 3 2 2 Applications ■ ■ Induction cooking, microwave ovens Soft-switching applications TO-247 TO-3P Desc |
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STMicroelectronics |
Automotive-grade N-channel Power MOSFET Order code STH13N120K5-2AG VDS 1200 V RDS(on) max. 0.69 Ω ID 12 A PTOT 250 W • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applic |
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STMicroelectronics |
IGBT • Designed for soft-commutation • Maximum junction temperature: TJ = 175 °C • VCE(sat) = 1.7 V (typ.) at IC = 30 A • Minimized tail current • Tight parameter distribution • Low thermal resistance • Very low drop and soft recovery co-packaged diode • |
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STMicroelectronics |
IGBT • Designed for soft-commutation • Maximum junction temperature: TJ = 175 °C • VCE(sat) = 1.7 V (typ.) @ IC = 20 A • Minimized tail current • Tight parameter distribution • Low thermal resistance • Very low drop and soft recovery co-packaged diode • P |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ ■ ■ . High voltage capability Low spread of dynamic parameters Very high switching speed Applications ■ Switching mode power supplies 1 2 3 Description The device is manufactured using high voltage Multi Epitaxial Planar technology for high |
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STMicroelectronics |
N-CHANNEL MOSFET V(BR)CEO Min. 8 5 400 Max. 35 25 1 1 Unit mA mA V VCEsat - 0.5 1 3 1 1.2 V VBEsat V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Applications ■ Switching mode power supplies Description The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speed |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Applications ■ Switching mode power supplies Description The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speed |
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STMicroelectronics |
HIGH EFFICIENCY ULTRAFAST DIODE AND BENEFITS s Suited for SMPS s Low losses s Low forward and reverse recovery times s High surge current capability s High junction temperature s Insulated package: TO-220FPAB: Insulation voltage = 2000 VDC Capacitance = 12 pF DESCRIPTION Dual cente |
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STMicroelectronics |
Dual 650V power Schottky silicon carbide diode No or negligible reverse recovery Switching behavior independent of temperature Suited for specific bridge-less topologies High forward surge capability Insulated package: – Capacitance: 7 pF – Insulated voltage: 2500 V rms Datasheet - pro |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STH130N8F7-2 VDS 80 V R DS(on)max. 5.0 mΩ ID 110 A P TOT 205 W Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching app |
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