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STH13N120K5-2AG |
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| Part Number | STH13N120K5-2AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultr... |
| Features |
Order code STH13N120K5-2AG
VDS 1200 V
RDS(on) max. 0.69 Ω
ID 12 A
PTOT 250 W
• AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status l... |
| Document |
 STH13N120K5-2AG Data Sheet
PDF 580.39KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STH13NB60 |
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| 2 | STH13NB60FI |
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| 3 | STH13009 |
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| 4 | STH130N10F3 |
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| 5 | STH130N10F3-2 |
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