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STMicroelectronics GW4 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
STGW40N120KD

STMicroelectronics
1200V short circuit rugged IGBT





■ Low on-losses High current capability Low gate charge Short circuit withstand time 10 µs IGBT co-packaged with Ultrafast free-wheeling diode 1 2 3 Applications
■ TO-247 Motor control Description This high voltage and short-circuit rugg
Datasheet
2
STGW40H65DFB

STMicroelectronics
IGBT

• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
• Tight parameter distribution
• Safe paralleling
• Positive VCE(sat) temperature coeffic
Datasheet
3
GW40N120KD

STMicroelectronics
STGW40N120KD





■ Low on-losses High current capability Low gate charge Short circuit withstand time 10 µs IGBT co-packaged with Ultrafast free-wheeling diode 1 2 3 Applications
■ TO-247 Motor control Description This high voltage and short-circuit rugg
Datasheet
4
GW40NC60KD

STMicroelectronics
40A - 600V - short circuit rugged IGBT

• Low on-voltage drop (VCE(sat))
• Low Cres / Cies ratio (no cross conduction susceptibility)
• Short-circuit withstand time 10 µs 2 1 3
• IGBT co-packaged with ultra fast free-wheeling diode TO-247 Applications
• High frequency inverters
• Motor
Datasheet
5
STGW40V60DF

STMicroelectronics
Trench gate field-stop IGBT

• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.8 V (typ.) @ IC = 40 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode G(1) E(3) NG1E3C2T
Datasheet
6
STGW40S120DF3

STMicroelectronics
Trench gate field-stop IGBT

• 10 µs of short-circuit withstand time
• VCE(sat) = 1.65 V (typ.) @ IC = 40 A
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode Applications
• Industrial drives
• UPS
• Solar
• We
Datasheet
7
STGW40H65DFB-4

STMicroelectronics
IGBT
TO247-4 2 34 1 C(1, TAB)
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
• Tight parameter distribution
• Safe paralleling
• Positive
Datasheet
8
STGW40V60F

STMicroelectronics
IGBT

• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.8 V (typ.) @ IC = 40 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance Applications
• Welding
• Power factor correction
• UPS
• Solar inv
Datasheet
9
STGW40H65FB

STMicroelectronics
IGBT

• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A
• Safe paralleling
• Tight parameter distribution
• Low thermal resistance Applicatio
Datasheet
10
STGW45HF60WDI

STMicroelectronics
IGBT

■ Improved Eoff at elevated temperature
■ Low VF soft recovery antiparallel diode Applications
■ Welding
■ Induction heating
■ Resonant converters Description The STGW45HF60WDI is based on a new advanced planar technology concept to yield an IGBT wit
Datasheet
11
GW40NC60V

STMicroelectronics
N-CHANNEL IGBT
TYPE STGW40NC60V s s Figure 1: Package IC @100°C 50 A VCES 600 V VCE(sat) (Max) @25°C < 2.5 V s s s s HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY ENERGY OFF LOSSES INCLUDE TAIL CURRENT LOWER CRES
Datasheet
12
STGW40NC60KD

STMicroelectronics
40A - 600V - short circuit rugged IGBT

• Low on-voltage drop (VCE(sat))
• Low Cres / Cies ratio (no cross conduction susceptibility)
• Short-circuit withstand time 10 µs 2 1 3
• IGBT co-packaged with ultra fast free-wheeling diode TO-247 Applications
• High frequency inverters
• Motor
Datasheet
13
STGW40M120DF3

STMicroelectronics
Trench gate field-stop IGBT
   72 72ORQJOHDGV Figure 1.Internal schematic diagram
• 10 µs of short-circuit withstand time
• VCE(sat) = 1.85 V (typ.) @ IC = 40 A
• Tight parameters distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery
Datasheet
14
STGW40H120DF2

STMicroelectronics
Trench gate field-stop IGBT

 Maximum junction temperature: TJ = 175 °C
 High speed switching series
 Minimized tail current
 VCE(sat) = 2.1 V (typ.) @ IC = 40 A
 5 μs minimum short circuit withstand time at TJ=150 °C
 Safe paralleling
 Very fast recovery antiparallel dio
Datasheet



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