| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
STD3NB50 tot dv/dt( 1 ) T stg Tj May 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissip |
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STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET Type VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1 RDS(on) 120 mΩ Ilim 3.5 A Vclamp 40 V ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input |
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STMicroelectronics |
N-CHANNEL 6A - 600V - DPAK PowerMESH IGBT PE & REEL September 2003 1/10 www.DataSheet4U.com STGD3NB60HD ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID STD3NK90ZT4 900 V 4.8 Ω 3A • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description AM01476v1_tab This high-volta |
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STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET Type VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1 RDS(on) 120 mΩ Ilim 3.5 A Vclamp 40 V ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR us) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 500 500 ± 30 2.7 1.7 10.8 50 0.4 -65 to 150 150 Uni |
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STMicroelectronics |
N-CHANNEL MOSFET ID I DM ( • ) P tot dv/dt( 1) Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal |
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STMicroelectronics |
N-CHANNEL MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-channel Power MOSFET Order code STD3N65M6 VDS 650 V RDS(on) max. 1.5 Ω • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected ID 3.5 A Applications • Switching applications D |
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STMicroelectronics |
7A 1200V very fast IGBT ■ High voltage capability ■ High speed Applications ■ Home appliance ■ Lighting Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance a |
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STMicroelectronics |
N-channel Power MOSFET TAB 3 2 1 IPAK D(2, TAB) Order code VDS STD3NK80Z-1 800 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications RDS(on) max. 4.5 Ω ID 2.5 A • Switching applications G(1) Description |
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STMicroelectronics |
N-Channel Power MOSFET Order code VDS STD3NK80ZT4 800 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected RDS(on) max. 4.5 Ω ID 2.5 A Applications • Switching applications Description AM01476v1_tab This high-volt |
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STMicroelectronics |
N-CHANNEL Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o Value 250 250 ± 20 3 1.9 12 45 0.36 -65 to 150 150 Unit V V V A A |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 300 300 ± 20 3 2 12 50 0.4 -65 to 150 150 Unit V V V |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 300 300 ± 15 3 2 12 50 0.4 -65 to 150 150 Unit V V |
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STMicroelectronics |
N-CHANNEL MOSFET tot dv/dt( 1 ) T stg Tj May 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissip |
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STMicroelectronics |
N-CHANNEL MOSFET ter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor P |
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STMicroelectronics |
N-CHANNEL MOSFET n-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery |
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STMicroelectronics |
N-CHANNEL MOSFET n-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery |
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