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D3NB50 |
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| Part Number | D3NB50 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Co... |
| Features |
tot dv/dt( 1 ) T stg Tj May 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o
Value 500 500 ± 30 3 1.9 12 50 0.4 4.5 -65 to 150 150
(1) ISD ≤3A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W/ o C V/ns
o o
C C 1/6
( •) Pulse width limited by safe operating area This is pre... |
| Document |
 D3NB50 Data Sheet
PDF 91.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | D3N40 |
Alpha & Omega Semiconductors |
AOD3N40 |
|
| 2 | D3N50 |
Alpha & Omega Semiconductors |
AOD3N50 |
|
| 3 | D3NK80Z |
STMicroelectronics |
N-CHANNEL Power MOSFET |
|
| 4 | D3NK90Z |
STMicroelectronics |
N-channel Power MOSFET |
|
| 5 | D3-6402R-9Z |
Intersil Corporation |
HD3-6402R-9Z |
|