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STMicroelectronics |
Automotive-grade dual N-channel Power MOSFET Order code STL8DN6LF3 VDS 60 V RDS(on) max. 30 mΩ ID 7.8 A 1 S2 Drain on rear side 2 G2 3 S1 4 G1 8 D2 7 6 D1 5 • AEC-Q101 qualified • Logic level VGS(th) • 175 °C maximum junction temperature • 100% avalanche rated • Wettable flank packag |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ ■ ■ ■ ■ TAB High voltage capability Low spread of dynamic parameters Very high switching speed Large RBSOA Integrated antiparallel collector-emitter diode 1 3 2 1 3 2 TO-220 TAB TO-220FP Applications ■ ■ Electronic ballast for fluorescent lig |
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STMicroelectronics |
Automotive-grade dual N-channel Power MOSFET Order code STL8DN6LF3 VDS 60 V RDS(on) max. 30 mΩ ID 7.8 A 1 S2 Drain on rear side 2 G2 3 S1 4 G1 8 D2 7 6 D1 5 • AEC-Q101 qualified • Logic level VGS(th) • 175 °C maximum junction temperature • 100% avalanche rated • Wettable flank packag |
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STMicroelectronics |
Automotive-grade dual N-channel Power MOSFET Order code STL8DN10LF3 VDS 100 V RDS(on) max. 35 mΩ ID 7.8 A Designed for automotive applications and AEC-Q101 qualified Logic level VGS(th) 175 °C maximum junction temperature 100% avalanche rated Wettable flank package Applications |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID 4 1 STS8DN6LF6AG 60 V 24 mΩ 8A SO-8 D1(7, 8) D2(5, 6) • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level G1(2) G2(4) |
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STMicroelectronics |
Power MOSFETs Type STS8DN3LLH5 VDSS 30 V RDS(on) max < 0.019 Ω ID 10 A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate dr |
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STMicroelectronics |
Dual N-channel Power MOSFET 3RZHU)/$7[GRXEOHLVODQG Order code STL8DN10LF3 VDS 100 V RDS(on) max 35 mΩ ID 7.8 A • Designed for automotive applications and AEC-Q101 qualified • Logic level VGS(th) • 175 °C maximum junction temperature • 100% avalanche rated • Wettable |
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STMicroelectronics |
Automotive-grade dual N-channel MOSFET Order code STL8DN6LF6AG VDS 60 V RDS(on) max. 27 mΩ ID 32 A 4 3 2 1 PowerFLAT 5x6 double island D1(7, 8) D2(5, 6) • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • W |
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STMicroelectronics |
Automotive-grade dual N-channel Power MOSFET Order code VDS RDS(on) max. ID 4 1 STS8DN6LF6AG 60 V 24 mΩ 8A SO-8 D1(7, 8) D2(5, 6) • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level G1(2) G2(4) |
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STMicroelectronics |
Automotive-grade N-channel Power MOSFET Order code VDS RDS(on) max. ID STL38DN6F7AG 60 V 27 mΩ 10 A • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Sw |
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