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STL38DN6F7AG |
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| Part Number | STL38DN6F7AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate char... |
| Features |
Order code
VDS
RDS(on) max.
ID
STL38DN6F7AG
60 V
27 mΩ
10 A
• AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. NG14G22D1D2RSS13S21 Product status STL38DN6F7AG Device summary Order ... |
| Document |
 STL38DN6F7AG Data Sheet
PDF 703.61KB |
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