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STL8DN6LF6AG |
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| Part Number | STL8DN6LF6AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | S1(1) S2(3) This device is a dual N-channel Power MOSFET developed using the STripFET F6 SC12820 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) ... |
| Features |
Order code STL8DN6LF6AG
VDS 60 V
RDS(on) max. 27 mΩ
ID 32 A
4 3 2 1
PowerFLAT 5x6 double island
D1(7, 8)
D2(5, 6)
• AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Wettable flank package PTOT 55 W G1(2) G2(4) Applications • Switching applications Description S1(1) S2(3) This device is a dual N-channel Power MOSFET developed using the STripFET F6 SC12820 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STL8DN6LF6AG ... |
| Document |
 STL8DN6LF6AG Data Sheet
PDF 399.10KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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