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STMicroelectronics |
0.5A PNP transistor Vceo 150 V IC(max.) 0.5 A HFE at 5 V, 10 mA > 60 Tj(max.) 200 °C • Hermetic packages • ESCC qualified • 100 krad Description The 2N5401 and SOC5401 are bipolar transistors able to operate under severe environment conditions and radiation expos |
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STMicroelectronics |
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS case Thermal Resistance Junction-case Max 0.875 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I CBO I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I E = 0) Collec |
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STMicroelectronics |
NPN power transistors ■ NPN transistors Applications t(s) ■ Linear and switching industrial equipment ucDescription rodThe devices are manufactured in Planar technology with “Base Island” layout. The Presulting transistor shows exceptional high gain teperformance coupled |
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STMicroelectronics |
SILICON NPN TRANSISTOR t (V BE = -1.5V) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 375 V V CE = 350 V V CE = 250 V V CE = 250 V V EB = 6 V I C = 1 mA I C = 100 mA I C = 0.1 A I C = 0.25 A I C = 0.5 A I C = 0.1 A IC IC IC I |
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STMicroelectronics |
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS erwise specified) Symbol I CEV I CBO I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 80 V V CE = 80 V V CB |
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STMicroelectronics |
(2N5641 - 2N564) VHF POWER TRANSISTOR |
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STMicroelectronics |
(2N5641 - 2N564) VHF POWER TRANSISTOR |
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STMicroelectronics |
Hi-Rel NPN bipolar transistor VCEO IC(max.) 80 V 5A • Hermetic package • ESCC qualified • Up to 100 krad(Si) low dose rate hFE at 5 V, 2.5 A > 70 Operating temperature range -65 °C to +200 °C Description The 2N5154HR is a bipolar transistor able to operate under severe en |
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STMicroelectronics |
NPN power transistors ■ NPN transistors Applications t(s) ■ Linear and switching industrial equipment ucDescription rodThe devices are manufactured in Planar technology with “Base Island” layout. The Presulting transistor shows exceptional high gain teperformance coupled |
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STMicroelectronics |
SILICON PNP TRANSISTORS |
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STMicroelectronics |
SILICON NPN TRANSISTORS hermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 17.5 175 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV Parameter Collector Cut-off Current (V BE = -1.5V) Test Conditions f |
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STMicroelectronics |
HIGH CURRENT NPN SILICON TRANSISTOR mbol I CEV Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 140 V V CE = 100 V V CE = 70 V V EB = 7 V V EB = 5 V I C = 0.2 A I C = 0.2 A I C = 0.2 A I C = |
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STMicroelectronics |
Hi-Rel NPN bipolar transistor Vceo IC(max.) 160 V 0.5 A • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose rate HFE at 5 V, 10 mA > 80 Tj(max.) 200 °C Description This bipolar transistor is able to operate under severe environment conditions and r |
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STMicroelectronics |
N-CHANNEL POWER MOSFET 3 2 1 TO-220FP Order code STF12N50M2 VDS 500 V RDS(on) max ID 0.38 Ω 10 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Figure 1. Internal schem |
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STMicroelectronics |
Silicon NPN Epitaxial Transistor |
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STMicroelectronics |
Silicon Planar Epitaxial PNP Transistor reakdown Voltage (I B = 0) Collector-emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Transition Frequency Collector-base Capacitance Test Conditions V CB = – 175 V V CE = – 150 V V EB = – 4 V Min. Typ. Max. – 50 – 50 – 20 Unit µA µA µ |
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STMicroelectronics |
SILICON PNP TRANSISTORS |
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STMicroelectronics |
5A PNP Transistor VCEO IC(max.) 80 V 5A • Hermetic package • ESCC qualified • Up to 100 krad(Si) low dose rate hFE at 5 V, 2.5 A > 70 Operating temperature range -65 °C to +200 °C Description The 2N5153HR is a bipolar transistor able to operate under severe en |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STD12N50DM2 VDS 500 V RDS(on) max. 0.350 Ω ID 11 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Application |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STF12N50DM2 VDS 500 V RDS(on) max. 0.350 Ω ID 11 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Application |
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