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2N5886 |
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| Part Number | 2N5886 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The 2N5886 is a silicon Epitaxial-Base NPN power transistor mounted in Jedec TO-3 metal case. It is inteded for use in power linear amplifiers and switching applications. INTERNAL SCHEMATIC DIAGRAM ... |
| Features |
erwise specified)
Symbol I CEV I CBO I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 80 V V CE = 80 V V CB = 80 V V CE = 40 V V EB = 5 V I C = 200 mA 80 T c = 150 o C Min. Typ. Max. 1 10 1 2 1 Unit mA mA mA mA mA V
V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ V BE(sat) ∗ V BE ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain
I C = 15 A I C = 25 A I C = 25 A I ... |
| Document |
 2N5886 Data Sheet
PDF 41.78KB |
| Distributor | Stock | Price | Buy |
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