2N5551HR STMicroelectronics Hi-Rel NPN bipolar transistor Datasheet, en stock, prix

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2N5551HR

STMicroelectronics
2N5551HR
2N5551HR 2N5551HR
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Part Number 2N5551HR
Manufacturer STMicroelectronics (https://www.st.com/)
Description This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). All part numbers are guaranteed up to 100 kr...
Features Vceo IC(max.) 160 V 0.5 A
• Hermetic packages
• ESCC and JANS qualified
• Up to 100 krad(Si) low dose rate HFE at 5 V, 10 mA > 80 Tj(max.) 200 °C Description This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). All part numbers are guaranteed up to 100 krad with low dose rate at 0.1 rad/s as per ESCC 22900. Qualified as per ESCC 5201/019 and MIL-PRF-19500/767 specifications and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment ...

Document Datasheet 2N5551HR Data Sheet
PDF 255.85KB
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