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STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes VDS @ TJmax RDS(on) max ID STB24N60M2 STI24N60M2 STP24N60M2 STW24N60M2 650 V 0.19 Ω 18 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected |
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STMicroelectronics |
N-channel Power MOSFET Type STB24NM65N STI24NM65N STF24NM65N STP24NM65N STW24NM65N VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω ID 19 A 19 A 19 A(1) 19 A 19 A 1. Limited only by maximum temperature allowed ■ 100 |
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STMicroelectronics |
N-channel Power MOSFET 3 2 1 TO-220FP 123 I2PAKFP (TO-281) Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Order codes STF24N60M2 STFI24N60M2 VDS @ TJmax 650 V RDS(on) max ID 0.19 Ω 18 A • Extremely low gate charge • Lower RDS(on) x area vs previous |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS STW24N60M6 600 V • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected RDS(on) max. 190 mΩ Applications • Switching applications • LLC co |
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STMicroelectronics |
N-channel MOSFET Order codes STF24NM60N STI24NM60N STP24NM60N STW24NM60N ■ ■ ■ TAB VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max. < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω ID 17 A 1 3 2 3 12 17 A 17 A 17 A TO-220FP I2PAK 100% avalanche tested Low input capacit |
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STMicroelectronics |
N-channel Power MOSFET 3 2 1 TO-220FP 7$% TO-220 123 I2PAK 3 2 1 TO-247 Order codes VDS @Tjmax STF24NM60N STI24NM60N STP24NM60N 650 V STW24NM60N RDS(on) max. 0.19 Ω ID 17 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input res |
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STMicroelectronics |
N-channel MOSFET Order codes STB24N65M2 STF24N65M2 STP24N65M2 VDS 650 V RDS(on) max 0.23 Ω ID 16 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching applications Descript |
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STMicroelectronics |
N-channel MOSFET Order codes STB24N65M2 STF24N65M2 STP24N65M2 VDS 650 V RDS(on) max 0.23 Ω ID 16 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching applications Descript |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS RDS(on) max. ID STP24N60M6 600 V 190 mΩ 17 A • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applicatio |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes VDS @ TJmax RDS(on) max ID STB24N60M2 STI24N60M2 STP24N60M2 STW24N60M2 650 V 0.19 Ω 18 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected |
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STMicroelectronics |
N-channel Power MOSFET 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram Order codes VDS @Tjmax RDS(on) max. ID STFI24NM60N 650 V 0.19 Ω 17 A • Fully insulated and low profile package with increased creepage path from pin to heatsink plate • 100% avalanche t |
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STMicroelectronics |
N-channel Power MOSFET Type VDS RDS(on) max. ID STP24NF10 100 V 60 mΩ 26 A • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge D(2, TAB) Applications • Switching applications G(1) S(3) AM01475v1_noZen Description This Power MOSFET has bee |
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STMicroelectronics |
N-Channel MOSFET Order code VDS @TJmax RDS(on) max. ID STF24N60M2 650 V 190 mΩ 18 A 23 1 TO-220FP • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected D(2) G(1) Applications • Switching applic |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max ID 0.20 Ω 18 A • Extremely low gate charge and input capacitance • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Z |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max ID 0.20 Ω 18 A • Extremely low gate charge and input capacitance • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Z |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max ID 0.20 Ω 18 A • Extremely low gate charge and input capacitance • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Z |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω ID 3 STB24NM65N STI24NM65N STF24NM65N STP24NM65N STW24NM65N 19 A 19 A 19 A(1) 19 A 19 A 1 2 3 12 TO-220 3 1 I²PAK |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω ID 3 STB24NM65N STI24NM65N STF24NM65N STP24NM65N STW24NM65N 19 A 19 A 19 A(1) 19 A 19 A 1 2 3 12 TO-220 3 1 I²PAK |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω ID 3 STB24NM65N STI24NM65N STF24NM65N STP24NM65N STW24NM65N 19 A 19 A 19 A(1) 19 A 19 A 1 2 3 12 TO-220 3 1 I²PAK |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω ID 3 STB24NM65N STI24NM65N STF24NM65N STP24NM65N STW24NM65N 19 A 19 A 19 A(1) 19 A 19 A 1 2 3 12 TO-220 3 1 I²PAK |
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