24NM65N |
Part Number | 24NM65N |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of ... |
Features |
Type
STB24NM65N STI24NM65N STF24NM65N STP24NM65N STW24NM65N
VDSS (@TJmax)
710 V 710 V 710 V 710 V 710 V
RDS(on) max
< 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω
ID
19 A 19 A 19 A(1) 19 A 19 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s ... |
Document |
24NM65N Data Sheet
PDF 518.89KB |
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