| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER ro package. The HCC/HCF40100B is a 32-stage shift register containing 32 D-type masterslave flip-flops. The data present at the SHIFTRIGHT INPUT is transferred into the first register stage synchronously with the positive CLOCK edge, provided the LEF |
|
|
|
|
STMicroelectronics |
N-Channel MOSFET Type STD100N03L STD100N03L-1 ■ ■ ■ Package ID Pw VDSSS 30 V 30 V RDS(on) <0.0055 Ω 80 A(1) 110 W <0.0055 Ω 80 A(1) 110 W 3 1 1 3 2 100%AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252) LOGIC LEVEL THRESHOLD DPAK IPAK Description This MOSFET is |
|
|
|
|
STMicroelectronics |
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpo |
|
|
|
|
STMicroelectronics |
SINGLE OPERATIONAL AMPLIFIER AND SINGLE COMPARATOR vailable in Tape & Reel (DT) July 2001 + 1/5 TSM100 ABSOLUTE MAXIMUM RATINGS Symbol VCC Vid Vi Toper Tj Tl Rthja Supply Voltage Differential Input Voltage Input Voltage Operating Free-air Temperature Range Maximum Junction Temperature Maximum Lea |
|
|
|
|
STMicroelectronics |
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER AND BENEFITS n 2 x 10 A 100 V 175°C 0.64 V A1 K A2 n n n n n NEGLIGIBLE SWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE RATED INSULATED PACKAG |
|
|
|
|
STMicroelectronics |
POWER SCHOTTKY RECTIFIER AND BENEFITS ■ ■ ■ ■ 2 x 10 A 100 V 175°C 0.71 V A1 K A2 High junction temperature capability for converters located in confined enrironment Low leakage current at high temperature Low static and dynamic losses as a result of the Schottky barrier |
|
|
|
|
STMicroelectronics |
600W TVS • Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs) • Stand-off voltage range from 5 V to 188 V • Unidirectional and bidirectional types • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 150 °C • High power capability |
|
|
|
|
STMicroelectronics |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 100˚C) 270 13.5 32 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Te |
|
|
|
|
STMicroelectronics |
SINGLE OPERATIONAL AMPLIFIER AND SINGLE COMPARATOR vailable in Tape & Reel (DT) July 2001 + 1/5 TSM100 ABSOLUTE MAXIMUM RATINGS Symbol VCC Vid Vi Toper Tj Tl Rthja Supply Voltage Differential Input Voltage Input Voltage Operating Free-air Temperature Range Maximum Junction Temperature Maximum Lea |
|
|
|
|
STMicroelectronics |
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER • Negligible switching losses • High junction temperature capability • Low leakage current • Good trade off between leakage current and forward voltage drop • Avalanche rated • Insulated package: TO-220FPAB – Insulating voltage = 2000 VRMS sine • ECO |
|
|
|
|
STMicroelectronics |
Cool bypass switch ■ ■ ■ ■ IF = 16 A, VR = 40 V Very low forward voltage drop Very low reverse leakage current 175 °C operating junction temperature K K A A K A A TO220 D2PAK Applications ■ Photovoltaic panels Description The SPV1002 is a system-in-package so |
|
|
|
|
STMicroelectronics |
1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM ■ 5v ± 10% Supply Voltage in Read Operation ■ Access Time: 35ns ■ Low Power Consumption: t(s) – Active Current: 30 mA at 5 MHz – Standby Current: 100 µA uc ■ Programming Voltage: 12.75V ± 0.25V d ■ Programming Time: 100 µs/word ro ■ Electronic Signatu |
|
|
|
|
STMicroelectronics |
MEMS motion sensor:dual-axis pitch and yaw +-100 dps analog gyroscope ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2.7 V to 3.6 V single-supply operation Wide operating temperature range (-40 °C to +85 °C) High stability over temperature Analog absolute angular-rate outputs Two separate outputs for each axis (1x and 4x amplified) Integrat |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Type STF3NK100Z STP3NK100Z STD3NK100Z ■ ■ ■ ■ ■ VDSS 1000V 1000V 1000V RDS(on) Max < 6Ω < 6Ω < 6Ω ID 2.5A 2.5A 2.5A PTOT 25W 90W 90W TO-220 1 2 1 3 2 3 TO-220FP Extremely high dv/dt capability 3 100% avalanche tested Gate charge minimized Ve |
|
|
|
|
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR g Junction Temperature o o Value STP3N100FI 1000 1000 ± 20 3.5 2 14 100 0.8 -65 to 150 150 2 1.2 14 40 0.32 2000 Unit V V V A A A W W/o C V o o C C ( •) Pulse width limited by safe operating area December 1996 1/10 www.DataSheet.in STP3N100 |
|
|
|
|
STMicroelectronics |
32-bit MCU • Core: ARM® 32-bit Cortex®-M3 CPU – 24 MHz maximum frequency, 1.25 DMIPS /MHz (Dhrystone 2.1) performance – Single-cycle multiplication and hardware division • Memories – 256 to 512 Kbytes of Flash memory – 24 to 32 Kbytes of SRAM – Flexible static |
|
|
|
|
STMicroelectronics |
advanced ARM-based 32-bit MCU • Core: ARM® 32-bit Cortex®-M3 CPU – 24 MHz maximum frequency, 1.25 DMIPS/MHz (Dhrystone 2.1) performance – Single-cycle multiplication and hardware division • Memories – 16 to 128 Kbytes of Flash memory – 4 to 8 Kbytes of SRAM • Clock, reset and sup |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET 1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Order code STL100N10F7 VDSS RDS(on) max ID PTOT 100 V 0.0073 Ω 19 A 5 W • Ultra low on-resistance • 100% avalanche tested Applications • Switching a |
|
|
|
|
STMicroelectronics |
FAST RECOVERY RECTIFIER DIODES 25°C Test Conditions VR = VRRM IF = 3A Min. Typ. Max. 20 1.3 Unit µA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A Irr = 0.25A Min. Typ. Max. 150 Unit ns To evaluate the conduction losses use the following equati |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code VDS STP100N8F6 80 V RDS(on)max. 0.009 Ω ID 100 A PTOT 176 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is an N-c |
|